Sputtering deposition is a PVD method in which a thin film is formed by sputtering a material from a target and then depositing it on a substrate.

Co-sputtering is simultaneous coating from two or multiple sputtering targets. It is used for compound - alloy or composite material.

For UHV environment, it is very important to scientific research, because experiments often require surfaces to be maintained in a contamination-free state for the duration of the process.

The high-quality multilayer films are becoming increasingly important in precision systems that single material thin film cannot practice the required specifications.

In-Line Sputtering Deposition System is that substrates passed linearly beneath one or more sputter cathodes to acquire their thin film coating.

It has 4 independent sputtering chambers, allowing customers to arbitrarily match the deposited materials, while maintaining a quick and low-cost system.

The materials are placed in a resistive heat source in vacuum environment to evaporate directly to the substrate, where they condense back to a solid state form a thin film.

The evaporation source using electric heating can be used to deposit most organic and inorganic thin films, among which the resistance Joule method is the most common.

This process requires high precision and uniformity of thin films by accurately controlling temperature and deposition rate.

E-beam is generated from a tungsten filament and driven by electric and magnetic fields toward source material and transforms it into the gaseous phase to be deposited on the substrate surface.

E-beam deposition system is a method of using electron beam generated from an electron source in a vacuum to material, and heating and evaporating it so that the evaporated material forms a thin film on the substance.

For UHV environment, it is very important to scientific research, because experiments often require surfaces to be maintained in a contamination-free state for the duration of the process.

Lift-Off is a process of creating pattern on the substrate surface and opposite to etching process.

Chemical Vapor Deposition is a chemical technology prepared from high-purity, high-performance solid materials.

PECVD alternate for depositing a variety of thin films at lower temperatures than conventional CVD methods without losing film quality.

It can provide some energy for the deposition reaction. Compared with the PECVD, ICP-CVD can deposit various films at a lower temperature without degrading the film quality.

This reaction at the surface is what forms the solid phase material. Low pressure is used to reduce of gas phase reactions, and also increases the uniformity across the substrate.

With the increase in size of LCD panels and glass need of manufacturing, manufacturing equipment has also become larger, requiring ever-larger equipment investments.

Diamond-like Carbons are formed from combining high concentrate sp3 bonding (Diamond) with low concentrate sp2 bonding.

The batch type Plasma Enhanced Chemical Vapor Deposition (PECVD) can provide energy for deposition reaction.

It can be considered as a special type of chemical vapor deposition. The majority of ALD reactions use two or more chemicals called precursors.

In most ALD reactions, two chemicals are used as precursors. These precursors react with the material surface in a continuous and self-limiting manner.

This process allows fabricating the conformal thin films of various materials with atomic-scale control without high temperature required to deliver the necessary activation energy.

Dry etching is known as plasma dry etching is the process of removing materials from the surface of another material.

The RIE process is a chemical physical etching process, and is the most important process for constructing various films in semiconductor manufacturing.

The high density plasma is created, surrounded by the coil, and act as the secondary coil in a transformer, accelerating the electrons and ions, and thus causing collisions that produce even more ions and electrons.

As the functional size of the device is further reduced, further use of ALE is required to achieve its required accuracy.

Microwave plasma cleaning technology has many advantages, such as no-damage, high efficiency, and no electrode sputter pollution. It can thoroughly clean and treat contaminants on the surface of materials, and is especially suitable for packaging cleaning of sensitive chips.