Plasma enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition (CVD) technology using a plasma to provide some of the energy for the deposition reaction to take place. PECVD alternate for depositing a variety of thin films at lower temperatures than conventional CVD methods without losing film quality.

PECVD is more widely used than other CVD technologies in semiconductor industry. PECVD can deposit thin film at low operating temperature (less than 350°C) with uniform coating of different shapes, good step coverage, high packing. For SYSKEY's system can control the gas and real time record system data (pressure, substrate temperature), can perfectly produce high-quality thin films.


       PECVD and RIE               PECVD and PEALD

  We also develop different machines but share
    components to achieve cost down.


Applications Chamber
  • Plasma cleaning
  • SiOx, SiNx, a-Si, DLC and other films.
  • Scratch-resistant displays.
  • Wear coatings for medical & commercial products.
  • Encapsulation, isolation.
  • Aluminum with small footprint.
  • Chamber temperature control by using heater jacket.


Configurations and benefits Options
  • Flexible substrate size up to 12 inch wafers in diameter.
  • Single wafer or multi wafers.
  • Excellent thin-film uniformity of less than ±3%.
  • Mass flow controllers with highly uniform gas distribution up to 10 gas lines.
  • Substrate chuck heating up to 400°C by stable process temperatures control.
  • Direct and remote capacitive coupled plasma (CCP).
  • Plasma cleaning of chamber is possible for some materials.
  • Intergrated with Load-Lock (single substrate, cassette-to-cassette), glove box.
  • RPS for cleaning chamber.
  • Optical emission spectrometer.
  • Cluster allows for vacuum transfer of substrates.



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