In reactive ion etching (RIE), its etching profile, etching rate, uniformity, and repeatability can be controlled very precisely. Isotropic etching profiles as well as anisotropic are possible.

Therefore, the RIE process is a chemical physical etching process, and is the most important process for constructing various films in semiconductor manufacturing. For SYSKEY's system can control the gas and plasma process, can perfectly produce high-quality thin films.


Applications Chamber
  • Basic plasma research.
  • III-V compound semiconductors (GaAsn, InP, GaN) etching.
  • Si, SiO2, SiNx etching.
  • MEMS.
  • Metal, silicon, resist etching.
  • Aluminum hard anodized chamber.
  • Chamber temperature control by using water chiller/heater.


Configurations and benefits Options
  • Flexible substrate size up to 12 inch in diameter.
  • Single wafer or multi wafers.
  • Excellent thin-film uniformity of less than ±5%.
  • Mass flow controllers with highly uniform gas distribution up to 6 gas lines.
  • Substrate chuck heating up to 400°C or cooling down to -20°C by stable process temperatures.
  • Turbo-molecular pump package.
  • Optical emission spectrometer for EDP (Endpoint detector).




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