ICP-CVD Inductively coupled plasma chemical vapor deposition is a chemical vapor deposition technique that uses ICP. It can provide some energy for the deposition reaction. Compared with the PECVD, ICP-CVD can deposit various films at a lower temperature without degrading the film quality. Using the ICP as a plasma source has the advantages of higher plasma concentration, lower energy loss, higher power and higher reaction rate. For SYSKEY's system can control the gas and real time record system data (pressure, substrate temperature), can perfectly produce high-quality thin films.




      3 D Graphene


Applications Chamber
  • Growth of CNT and graphene.
  • SiOx, SiNx, a-Si, DLC and other films.
  • 2D material.
  • Wear coatings for medical & commercial products.
  • Aluminum or stainless steel chamber with small footprint.
  • Chamber temperature control by using water chiller/heater.


Configurations and benefits Options
  • Flexible substrate size up to 12 inch wafers in diameter.
  • Process pressure: 50~10-3torr.
  • Mass flow controllers with highly uniform gas distribution up to 10 gas lines.
  • Substrate heating up to 700°C by stable process temperatures control.
  • The RF match box wide operating range (from 50 W to 2000 W) accommodates a wide range of customer applications in ICP-CVD modes.
  • Intergrated with Load-Lock (single substrate, cassette-to-cassette), glove box.
  • RPS for cleaning chamber.
  • Optical emission spectrometer.
  • Cluster allows for vacuum transfer of substrates.



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