UHV E-Beam

An ultra high-vacuum (UHV) E-beam deposition system is characterized by pressures lower than 10-8 ~10-12 Torr and it is common in chemistry, physics, and engineering. UHV environment is very important to scientific research, because experiments often require surfaces to be maintained in a contamination-free state for the duration of the process and use of low energy electron and ion-based experimental techniques without undue interference from gas phase scattering.In the ultra-high vacuum environment E-beam system, SYSKEY can perfectly produce high-quality thin films.






Design the substrate rotary coating mechanism for ultra-high vacuum and high temperature heating, use ceramic Palin rotation, and do a water cooling cycle inside to protect the mechanism to make sure the stability of long-term operation.





Applications Chamber
  • Optoelectronic material (LED/Laser Diode).
  • Communication device.
  • Semiconductor device.


  • Flexible chamber sizes depend on substrate size and applications.
  • Chamber metal sealing and heater backing to 150℃.
  • Ultimate vacuum of chamber about 10-10 Torr.
Configurations and benefits Options
  • Flexible substrate size up to 8 inch wafer in diameter.
  • Excellent thin-film uniformity of less than ±3%.
  • Multi-pocket rotary e-beam sources (1/2/4/6 crucibles) with water cooled crucible.
  • Auto deposition rate control.
  • Multiple sources with sequential operation or co-deposition.
  • Substrate holder-cooling (nitrogen liquid down to -70°C) or heating (up to 800°C).
  • Intergrated with Load-Lock, robot arm, glove box.
  • Combined with ion-source, sputter gun, E-beam, plasma cleaning or assisted.













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