Diamond-like Carbons are formed from combining high concentrate sp3 bonding (Diamond) with low concentrate sp2 bonding.

The batch type Plasma Enhanced Chemical Vapor Deposition (PECVD) can provide energy for deposition reaction.

It can be considered as a special type of chemical vapor deposition. The majority of ALD reactions use two or more chemicals called precursors.

In most ALD reactions, two chemicals are used as precursors. These precursors react with the material surface in a continuous and self-limiting manner.

This process allows fabricating the conformal thin films of various materials with atomic-scale control without high temperature required to deliver the necessary activation energy.

Dry etching is known as plasma dry etching is the process of removing materials from the surface of another material.

The RIE process is a chemical physical etching process, and is the most important process for constructing various films in semiconductor manufacturing.

The high density plasma is created, surrounded by the coil, and act as the secondary coil in a transformer, accelerating the electrons and ions, and thus causing collisions that produce even more ions and electrons.

As the functional size of the device is further reduced, further use of ALE is required to achieve its required accuracy.