Syskey Technology Co., Ltd.

Products

FPD-PECVD

OLEDs / Display

OPV / Perovskite Solar-Cell

Semiconductors

Physical / Material research

With the increase in size of LCD panels and glass need of manufacturing, manufacturing equipment has also become larger, requiring ever-larger equipment investments.SYSKEY systems offer processes for amorphous silicon (a-Si), silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiON) and multi-layer depositions.

Applications
Amorphous Silicon (a-Si). Silicon Nitride (SiN_x). Silicon Oxide, Silane based (SiO_x). Silicon Oxide, TEOS based (SiO_x).
Configurations and benefits	Options
Flexible substrate size up to 550 x 650 mm² (glass). Excellent thin-film uniformity of less than ±3%. Up to six 7 gas lines per process chamber standard. In-situ chamber clean using remote plasma source. Substrate heating up to 380°C with stable temperature control.	Cassette port. Patented TEOS vaporizing system (TVS) for TEOS deposition. Extra spare port for OES, RGA or extra process monitoring.

LPCVD

It can provide some energy for the deposition reaction. Compared with the PECVD, ICP-CVD can deposit various films at a lower temperature without degrading the film quality.

ICP-CVD

This reaction at the surface is what forms the solid phase material. Low pressure is used to reduce of gas phase reactions, and also increases the uniformity across the substrate.

CVD

Chemical Vapor Deposition is a chemical technology prepared from high-purity, high-performance solid materials.

PECVD

PECVD alternate for depositing a variety of thin films at lower temperatures than conventional CVD methods without losing film quality.

LPCVD

It can provide some energy for the deposition reaction. Compared with the PECVD, ICP-CVD can deposit various films at a lower temperature without degrading the film quality.

ICP-CVD

This reaction at the surface is what forms the solid phase material. Low pressure is used to reduce of gas phase reactions, and also increases the uniformity across the substrate.

LPCVD

It can provide some energy for the deposition reaction. Compared with the PECVD, ICP-CVD can deposit various films at a lower temperature without degrading the film quality.

ICP-CVD

This reaction at the surface is what forms the solid phase material. Low pressure is used to reduce of gas phase reactions, and also increases the uniformity across the substrate.