Low pressure chemical vapor deposition (LPCVD) is a chemical vapor deposition technology that uses heat to initiate a reaction of a precursor gas on the substrate surface. This reaction at the surface is what forms the solid phase material. Low pressure (LP) is used to reduce of gas phase reactions, and also increases the uniformity across the substrate. Moreover, this process depend on temperature control with the higher the process temperature, the better the maintainability. Comparing to the conventional CVD processes at atmosphere pressure, the advantages of LPCVD are more wafers is loaded per a batch process, the thickness within-wafer uniformity has been improved
(< ±3%), and the production cost has been decreased.

• Growth of CNT and graphene.
• SiOx, SiNx, a-Si, DLC and other films.
• Annealing.
• Diffusion.
• Oxidation.

• Horizontal or Vertical  Furnace with loading mechanism.

• Flexible substrate size up to 8 inch wafers in diameter.
• Single wafer or multi wafers.
• Excellent thin-film uniformity of less than ±5%.
• Mass flow controllers with highly uniform gas distribution up to 10 gas lines.
• Substrate heating up to 1700°C by stable process temperatures control.

• Intergrated with Load-Lock (single substrate, cassette-to-cassette).