Plasma enhanced atomic layer deposition (PEALD) is an advanced method based on conventional ALD by using plasma as a condition to crack precursor materials instead of relying only on the thermal energy from the heated substrate. This process allows fabricating the conformal thin films of various materials with atomic-scale control without high temperature required to deliver the necessary activation energy. For SYSKEY's system can control the plasma and ALD process, the film thickness and uniformity is less than +/- 1%.

　　　SONOS Memory / MOS devices demo

High-K films for GaN power device