Plasma ALD

Plasma enhanced atomic layer deposition (PEALD) is an advanced method based on conventional ALD by using plasma as a condition to crack precursor materials instead of relying only on the thermal energy from the heated substrate. This process allows fabricating the conformal thin films of various materials with atomic-scale control without high temperature required to deliver the necessary activation energy. For SYSKEY's system can control the plasma and ALD process, the film thickness and uniformity is less than +/- 1%.

   SONOS Memory / MOS devices demo

High-K films for GaN power device



Applications Chamber
  • High-k gate oxides.
  • Passivation of crystal.
  • silicon solar cells and OLED.
  • MEMS.
  • Nano-electronics.
  • Coating of nano-porous structures .
  • Optical functional films.
  • Encapsulation.
  • Aluminum or stainless steel chamber with small footprint for fast cycle time.
  • Chamber temperature control by using heater jacket.




Configurations and benefits Options
  • Flexible substrate size up to 12 inch wafer in diameter.
  • Excellent thin-film uniformity of less than ±1%.
  • High conformity with processing of high aspect ratio and complex structures.
  • Precursor Sources up to 6 precursors individually heated to 200°C.
  • Fast pulse gas delivery valves with 10 msec response time.
  • Substrate heating up to 400°C.
  • Materials.
  • Al2O3, HfO2, SiO2, TiO2, Ta2O5, ZnO, AZO, HfO2, SiO2 , TiO2, GaO2, AlN, SiN, Pt…
  • Intergrated with Load-Lock (single substrate, cassette-to-cassette), glove box.
  • Spectroscopic ellipsometer ports.
  • Cluster allows for vacuum transfer of substrates.




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