- High etching rate and low rate control possible
- Highly uniform processing with a uniform parallel beam
- Flexible configuration for advanced research application
- Flexible wafer handling capability – open load, single wafer load lock or cassette-to-cassette robotic handler
- Produces controlled anisotropic etching
- The angular profile can be controlled due to the variable angle of the etching beam relative to the sample surface
- Load lock.(Optional)
- End point detection system.(Optional)
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- Endpoint monitors (OES, laser) compatibility.
- Cluster allows for vacuum transfer of substrates.
- Substrate size (up to) : 200 mm dia.
- Substrate Temperature : -20 °C to 80 °C
- Wafer Backside Helium : Helium backside cooling contact, backside pressure up to 50Torr (Optional)
- Substrate Tilt : Tiltable in-situ from 0° to 170° in 0.1° steps
- Substrate rotation speed : Up to 20 RPM
- Substrate Transfer : Manual or Automatic
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